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XP01210|XP1210 Datasheet

  • XP01210|XP1210

  • Composite Device - Composite Transistors

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  • 3頁

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Composite Transistors
XP01210
(XP1210)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
For switching/digital circuits
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
0.20
鹵0.05
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
10藲
鈻?/div>
Basic Part Number
鈥?/div>
UNR2210 (UN2210)
脳
2
0.9
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
0 to 0.1
0.9
+0.2
鈥?.1
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: AC
Internal Connection
5
Tr1
4
Tr2
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
Ratio
*
1
2
5藲
3
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE(Small
/Large)
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
Min
50
50
Typ
Max
0.1
0.5
0.01
160
0.50
0.99
0.25
4.9
0.2
鈭?0%
47
150
+30%
460
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
V
CE(sat)
V
OH
V
OL
R
1
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00135BED
0.2
鹵0.1
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
錚?/div>
V
V
V
k鈩?/div>
1

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